Jingyu Lin
Chinese-American physicist and engineer / From Wikipedia, the free encyclopedia
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Jingyu Lin (Chinese: 林景瑜) is a Chinese-American physicist and engineer working in the field of wide bandgap semiconductors and photonic devices. She is a co-inventor of MicroLED. In 2000, the husband-wife research team led by Hongxing Jiang and Jingyu Lin proposed and realized the operation of the first MicroLED and passive driving MicroLED microdisplay.[1][2][3][4][5] In 2009, their team and colleagues at III-N Technology, Inc. and Texas Tech University realized and patented the first active driving MicroLED microdisplay in VGA format by heterogeneously integrating MicroLED array with Si CMOS active-matrix driver.[6][7][8][9][10][11]
The single-chip high-voltage DC/AC LEDs via on-chip integration of mini- and MicroLED arrays developed by their team in 2002 have been widely commercialized for general solid-state lighting and automobile headlights.[12][13][14][15][16]
Under the support of DARPA-MTO’s SUVOS, CMUVT, DUVAP, and VIGIL programs, their research team contributed to the early developments of III-nitride deep UV emitters and detectors and InGaN energy devices in the United States. These include the prediction and confirmation that Al-rich AlGaN deep UV emitters emit light in the transverse-magnetic (TM) mode, the demonstration of the first UV and blue photonic crystal LEDs (PC-LEDs), one of the first to demonstrate conductivity control in Al-rich AlGaN and AlN deep UV avalanche photodetectors with an ultrahigh specific detectivity.[17] Supported by ARPA-E, their research team has developed crystal growth technologies for producing thick epitaxial films (or quasi-bulk crystals) of hexagonal boron nitride (h-BN) ultrawide bandgap semiconductor in large wafer sizes and realized h-BN thermal neutron detectors with a record high detection efficiency.[18][19][20][21]